Growth Dynamics of Millimeter‐Sized Single‐Crystal Hexagonal Boron Nitride Monolayers on Secondary Recrystallized Ni (100) Substrates
نویسندگان
چکیده
منابع مشابه
Electron knock-on damage in hexagonal boron nitride monolayers
J. Kotakoski,1 C. H. Jin,2,3 O. Lehtinen,1 K. Suenaga,2 and A. V. Krasheninnikov1,4 1Materials Physics Division, University of Helsinki, P.O. Box 43, 00014 Helsinki, Finland 2Nanotube Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan 3Department of Materials Science and Engineering, Meijo University, Tenpaku-ku, Nagoya 468-8502, Ja...
متن کاملDirect Observation of Defects in Hexagonal Boron Nitride Monolayers
1. Department of Materials Science and Engineering, the University of Tennessee, Knoxville, TN 37996, United States 2. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States 3. Department of Electrical Engineering and Computer Science, the University of Tennessee, Knoxville, TN 37996, United States 4. Department of Materials Science and Engi...
متن کاملIdentifying hexagonal boron nitride monolayers by transmission electron microscopy.
Multislice simulations in the transmission electron microscope (TEM) were used to examine changes in annular-dark-field scanning TEM (ADF-STEM) images, conventional bright-field TEM (BF-CTEM) images, and selected-area electron diffraction (SAED) patterns as atomically thin hexagonal boron nitride (h-BN) samples are tilted up to 500 mrad off of the [0001] zone axis. For monolayer h-BN the contra...
متن کاملEpitaxial growth of single-domain graphene on hexagonal boron nitride.
Hexagonal boron nitride (h-BN) has recently emerged as an excellent substrate for graphene nanodevices, owing to its atomically flat surface and its potential to engineer graphene's electronic structure. Thus far, graphene/h-BN heterostructures have been obtained only through a transfer process, which introduces structural uncertainties due to the random stacking between graphene and h-BN subst...
متن کاملLow temperature growth of boron nitride nanotubes on substrates.
High growth temperatures (>1100 degrees C), low production yield, and impurities have prevented research progress and applications of boron nitride nanotubes (BNNTs) in the past 10 years. Here, we show that BNNTs can be grown on substrates at 600 degrees C. These BNNTs are constructed of high-order tubular structures and can be used without purification. Tunneling spectroscopy indicates that th...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Advanced Materials Interfaces
سال: 2019
ISSN: 2196-7350,2196-7350
DOI: 10.1002/admi.201901198